MJE350 vs MJE350G

Product Attributes

Part Number MJE350 MJE350G
Manufacturer STMicroelectronics onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE350 MJE350G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 20.8 W 20 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126