MJE2955TG vs MJE2955T

Product Attributes

Part Number MJE2955TG MJE2955T
Manufacturer onsemi NTE Electronics, Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE2955TG MJE2955T
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 75 W 75 W
Frequency - Transition 2MHz 2MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220