MJE182 vs MJE181

Product Attributes

Part Number MJE182 MJE181
Manufacturer NTE Electronics, Inc onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE182 MJE181
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V 50 @ 100mA, 1V
Power - Max 12.5 W 12.5 W
Frequency - Transition 50MHz 50MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126