MJE180G vs MJE180

Product Attributes

Part Number MJE180G MJE180
Manufacturer onsemi NTE Electronics, Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE180G MJE180
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V 50 @ 100mA, 1V
Power - Max 1.5 W 12.5 W
Frequency - Transition 50MHz 50MHz
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126