MJE15031G vs MJE15031

Product Attributes

Part Number MJE15031G MJE15031
Manufacturer onsemi NTE Electronics, Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE15031G MJE15031
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 2V 20 @ 4A, 2V
Power - Max 50 W 50 W
Frequency - Transition 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220