MJE13007G vs MJE13007

Product Attributes

Part Number MJE13007G MJE13007
Manufacturer onsemi NTE Electronics, Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE13007G MJE13007
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A 3V @ 2A, 8A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A, 5V 5 @ 5A, 5V
Power - Max 80 W 80 W
Frequency - Transition 14MHz 14MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220