MJD6039T4G vs MJD6039T4

Product Attributes

Part Number MJD6039T4G MJD6039T4
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJD6039T4G MJD6039T4
Product Status Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 2A, 4V 500 @ 2A, 4V
Power - Max 1.75 W 1.75 W
Frequency - Transition - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK