MJD50G vs MJD350G

Product Attributes

Part Number MJD50G MJD350G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJD50G MJD350G
Product Status Active Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 1 A 500 mA
Voltage - Collector Emitter Breakdown (Max) 400 V 300 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A -
Current - Collector Cutoff (Max) 200µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 50mA, 10V
Power - Max 1.56 W 15 W
Frequency - Transition 10MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK