MJD45H11T4G vs MJD45H11T4

Product Attributes

Part Number MJD45H11T4G MJD45H11T4
Manufacturer onsemi STMicroelectronics
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJD45H11T4G MJD45H11T4
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 20 W
Frequency - Transition 90MHz -
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK