| Part Number | MJD31C1G | MJD31C1 |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
|
|
|
| Product Status | Active | Obsolete |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 3 A | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V | 10 @ 3A, 4V |
| Power - Max | 1.56 W | 1.56 W |
| Frequency - Transition | 3MHz | 3MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | I-PAK | I-PAK |