MJD3055T4G vs MJD3055T4

Product Attributes

Part Number MJD3055T4G MJD3055T4
Manufacturer onsemi STMicroelectronics
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJD3055T4G MJD3055T4
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 1.75 W 20 W
Frequency - Transition 2MHz 2MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK