MJD253T4G vs MJD253T4

Product Attributes

Part Number MJD253T4G MJD253T4
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJD253T4G MJD253T4
Product Status Active Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V 40 @ 200mA, 1V
Power - Max 1.4 W 12.5 W
Frequency - Transition 40MHz 40MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK