MJD200T4G vs MJD200T5G

Product Attributes

Part Number MJD200T4G MJD200T5G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJD200T4G MJD200T5G
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V 45 @ 2A, 1V
Power - Max 1.4 W 1.4 W
Frequency - Transition 65MHz 65MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK