MJD127T4G vs MJD127T4

Product Attributes

Part Number MJD127T4G MJD127T4
Manufacturer onsemi STMicroelectronics
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJD127T4G MJD127T4
Product Status Active Active
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 1000 @ 4A, 4V
Power - Max 1.75 W 20 W
Frequency - Transition 4MHz -
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK