| Part Number | MJD112-1G | MJD122-1G |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Last Time Buy |
| Transistor Type | NPN - Darlington | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2 A | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | 4V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 20µA | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | 1000 @ 4A, 4V |
| Power - Max | 1.75 W | 1.75 W |
| Frequency - Transition | 25MHz | 4MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Surface Mount |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | I-PAK | DPAK |