MJ802 vs MJ802G

Product Attributes

Part Number MJ802 MJ802G
Manufacturer NTE Electronics, Inc onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ802 MJ802G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 30 A 30 A
Voltage - Collector Emitter Breakdown (Max) 90 V 90 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 750mA, 7.5A 800mV @ 750mA, 7.5A
Current - Collector Cutoff (Max) - 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 7.5A, 2V 25 @ 7.5A, 2V
Power - Max 200 W 200 W
Frequency - Transition 2MHz 2MHz
Operating Temperature - -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3)