MJ2955G vs MJ2955

Product Attributes

Part Number MJ2955G MJ2955
Manufacturer onsemi NTE Electronics, Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ2955G MJ2955
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A 3V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 115 W 115 W
Frequency - Transition 2.5MHz -
Operating Temperature -65°C ~ 200°C (TJ) 200°C (TJ)
Mounting Type Through Hole Chassis Mount
Package / Case TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-3