MJ14002G vs MJ14001G

Product Attributes

Part Number MJ14002G MJ14001G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ14002G MJ14001G
Product Status Active Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 60 A 60 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 12A, 60A 3V @ 12A, 60A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 50A, 3V 15 @ 50A, 3V
Power - Max 300 W 300 W
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AE TO-204AE
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3)