MJ11033G vs MJ11033

Product Attributes

Part Number MJ11033G MJ11033
Manufacturer onsemi NTE Electronics, Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ11033G MJ11033
Product Status Active Active
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 50 A 50 A
Voltage - Collector Emitter Breakdown (Max) 120 V 120 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A 2.5V @ 250mA, 25A
Current - Collector Cutoff (Max) 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V 1000 @ 25A, 5V
Power - Max 300 W 300 W
Frequency - Transition - -
Operating Temperature -55°C ~ 200°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-204AE TO-204AE
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3)