MJ11032G vs MJ11030G

Product Attributes

Part Number MJ11032G MJ11030G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ11032G MJ11030G
Product Status Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 50 A 50 A
Voltage - Collector Emitter Breakdown (Max) 120 V 90 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max) 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V 1000 @ 25A, 5V
Power - Max 300 W 300 W
Frequency - Transition - -
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AE TO-204AE
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3)