MJ11032G vs MJ11012G

Product Attributes

Part Number MJ11032G MJ11012G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ11032G MJ11012G
Product Status Active Active
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 50 A 30 A
Voltage - Collector Emitter Breakdown (Max) 120 V 60 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A 4V @ 300mA, 30A
Current - Collector Cutoff (Max) 2mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V 1000 @ 20A, 5V
Power - Max 300 W 200 W
Frequency - Transition - 4MHz
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AE TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3)