Part Number | MJ11032G | MJ11012G |
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Manufacturer | onsemi | onsemi |
Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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Product Status | Active | Active |
Transistor Type | NPN - Darlington | NPN - Darlington |
Current - Collector (Ic) (Max) | 50 A | 30 A |
Voltage - Collector Emitter Breakdown (Max) | 120 V | 60 V |
Vce Saturation (Max) @ Ib, Ic | 3.5V @ 500mA, 50A | 4V @ 300mA, 30A |
Current - Collector Cutoff (Max) | 2mA | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A, 5V | 1000 @ 20A, 5V |
Power - Max | 300 W | 200 W |
Frequency - Transition | - | 4MHz |
Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-204AE | TO-204AA, TO-3 |
Supplier Device Package | TO-204 (TO-3) | TO-204 (TO-3) |