MJ11028G vs MJ11029G

Product Attributes

Part Number MJ11028G MJ11029G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ11028G MJ11029G
Product Status Active Active
Transistor Type NPN - Darlington -
Current - Collector (Ic) (Max) 50 A -
Voltage - Collector Emitter Breakdown (Max) 60 V -
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A -
Current - Collector Cutoff (Max) 2mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V -
Power - Max 300 W -
Frequency - Transition - -
Operating Temperature -55°C ~ 200°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-204AE -
Supplier Device Package TO-204 (TO-3) -