MJ11022G vs MJ11029G

Product Attributes

Part Number MJ11022G MJ11029G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ11022G MJ11029G
Product Status Active Active
Transistor Type NPN - Darlington -
Current - Collector (Ic) (Max) 15 A -
Voltage - Collector Emitter Breakdown (Max) 250 V -
Vce Saturation (Max) @ Ib, Ic 3.4V @ 150mA, 15A -
Current - Collector Cutoff (Max) 1mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 10A, 5V -
Power - Max 175 W -
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-204AA, TO-3 -
Supplier Device Package TO-204 (TO-3) -