MJ11022G vs MJ11012G

Product Attributes

Part Number MJ11022G MJ11012G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJ11022G MJ11012G
Product Status Active Active
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 15 A 30 A
Voltage - Collector Emitter Breakdown (Max) 250 V 60 V
Vce Saturation (Max) @ Ib, Ic 3.4V @ 150mA, 15A 4V @ 300mA, 30A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 10A, 5V 1000 @ 20A, 5V
Power - Max 175 W 200 W
Frequency - Transition - 4MHz
Operating Temperature -65°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3)