MC1413DR2G vs MC1413DR2

Product Attributes

Part Number MC1413DR2G MC1413DR2
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
MC1413DR2G MC1413DR2
Product Status Active Obsolete
Transistor Type 7 NPN Darlington 7 NPN Darlington
Current - Collector (Ic) (Max) 500mA 500mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V 1000 @ 350mA, 2V
Power - Max - -
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width) 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC 16-SOIC