MBT6429DW1T1G vs MBT6429DW1T1

Product Attributes

Part Number MBT6429DW1T1G MBT6429DW1T1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
MBT6429DW1T1G MBT6429DW1T1
Product Status Active Obsolete
Transistor Type 2 NPN (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 200mA 200mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100µA, 5V 500 @ 100µA, 5V
Power - Max 150mW 150mW
Frequency - Transition 700MHz 700MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363