MBT3906DW1T1G vs MBT3906DW1T1

Product Attributes

Part Number MBT3906DW1T1G MBT3906DW1T1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
MBT3906DW1T1G MBT3906DW1T1
Product Status Active Obsolete
Transistor Type 2 PNP (Dual) -
Current - Collector (Ic) (Max) 200mA -
Voltage - Collector Emitter Breakdown (Max) 40V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V -
Power - Max 150mW -
Frequency - Transition 250MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case 6-TSSOP, SC-88, SOT-363 -
Supplier Device Package SC-88/SC70-6/SOT-363 -