| Part Number | MBT35200MT1G | MBT35200MT1 |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 2 A | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 35 V | 35 V |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A | 310mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V | 100 @ 1.5A, 1.5V |
| Power - Max | 625 mW | 625 mW |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP | 6-TSOP |