MBC13900T1 vs MBC13900NT1

Product Attributes

Part Number MBC13900T1 MBC13900NT1
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MBC13900T1 MBC13900NT1
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 6.5V 6.5V
Frequency - Transition 15GHz 15GHz
Noise Figure (dB Typ @ f) 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain 15dB ~ 22dB 15dB ~ 22dB
Power - Max 188mW 188mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 2V 100 @ 5mA, 2V
Current - Collector (Ic) (Max) 20mA 20mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package SOT-343 SOT-343