LSIC1MO120G0040 vs LSIC1MO120G0080

Product Attributes

Part Number LSIC1MO120G0040 LSIC1MO120G0080
Manufacturer Littelfuse Inc. Littelfuse Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
LSIC1MO120G0040 LSIC1MO120G0080
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 20mA 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 20 V 92 nC @ 20 V
Vgs (Max) +22V, -6V +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 317 pF @ 800 V 170 pF @ 800 V
FET Feature - -
Power Dissipation (Max) 357W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4L TO-247-4L
Package / Case TO-247-4 TO-247-4