LSIC1MO120E0160 vs LSIC1MO120G0160

Product Attributes

Part Number LSIC1MO120E0160 LSIC1MO120G0160
Manufacturer Littelfuse Inc. Littelfuse Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
LSIC1MO120E0160 LSIC1MO120G0160
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 20V 200mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 20 V 50 nC @ 20 V
Vgs (Max) +22V, -6V +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 800 V 890 pF @ 800 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD TO-247-4L
Package / Case TO-247-3 TO-247-4