LND150N3-G vs LND150N8-G

Product Attributes

Part Number LND150N3-G LND150N8-G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
LND150N3-G LND150N8-G
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 30mA (Tj) 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V 0V
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V 10 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 740mW (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-92-3 SOT-89-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-243AA