KSD560Y vs KSD560R

Product Attributes

Part Number KSD560Y KSD560R
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
KSD560Y KSD560R
Product Status Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 3A, 2V 2000 @ 3A, 2V
Power - Max 1.5 W 1.5 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3