KSD227YBU vs KSD227GBU

Product Attributes

Part Number KSD227YBU KSD227GBU
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
KSD227YBU KSD227GBU
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 300 mA 300 mA
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 30mA, 300mA 400mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 1V 200 @ 50mA, 1V
Power - Max 400 mW 400 mW
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3 TO-92-3