KSD2012GTU vs KSD2012YTU

Product Attributes

Part Number KSD2012GTU KSD2012YTU
Manufacturer onsemi Fairchild Semiconductor
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
KSD2012GTU KSD2012YTU
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A 1V @ 200mA, 2A
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 5V 100 @ 500mA, 5V
Power - Max 25 W 25 W
Frequency - Transition 3MHz 3MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack
Supplier Device Package TO-220F-3 TO-220F-3