KSD1020GTA vs KSD1020YTA

Product Attributes

Part Number KSD1020GTA KSD1020YTA
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
KSD1020GTA KSD1020YTA
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 700 mA 700 mA
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 70mA, 700mA 400mV @ 70mA, 700mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 1V 120 @ 100mA, 1V
Power - Max 350 mW 350 mW
Frequency - Transition 170MHz 170MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Short Body TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S TO-92S