JANTXV2N5013 vs JANTXV2N5013S

Product Attributes

Part Number JANTXV2N5013 JANTXV2N5013S
Manufacturer Microsemi Corporation Microsemi Corporation
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
JANTXV2N5013 JANTXV2N5013S
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 800 V 800 V
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 10V 30 @ 20mA, 10V
Power - Max 1 W 1 W
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-5 TO-39 (TO-205AD)