JANTXV2N3810L vs JANTXV2N3810

Product Attributes

Part Number JANTXV2N3810L JANTXV2N3810
Manufacturer Microchip Technology Microchip Technology
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
JANTXV2N3810L JANTXV2N3810
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA 50mA
Voltage - Collector Emitter Breakdown (Max) 60V 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V 150 @ 1mA, 5V
Power - Max 350mW 350mW
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-78-6 Metal Can TO-78-6 Metal Can
Supplier Device Package TO-78-6 TO-78-6