JANTXV2N3735 vs JANTXV2N3735L

Product Attributes

Part Number JANTXV2N3735 JANTXV2N3735L
Manufacturer Microsemi Corporation Microchip Technology
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
JANTXV2N3735 JANTXV2N3735L
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A 900mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 1.5V 20 @ 1A, 1.5V
Power - Max 1 W 1 W
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-39 TO-5