JANTX2N2857 vs JANTXV2N2857

Product Attributes

Part Number JANTX2N2857 JANTXV2N2857
Manufacturer Microsemi Corporation Microsemi Corporation
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
JANTX2N2857 JANTXV2N2857
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 500MHz 500MHz
Noise Figure (dB Typ @ f) 4.5dB @ 450MHz 4.5dB @ 450MHz
Gain 12.5dB ~ 21dB @ 450MHz 12.5dB ~ 21dB @ 450MHz
Power - Max 200mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 3mA, 1V 30 @ 3mA, 1V
Current - Collector (Ic) (Max) 40mA 40mA
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-72-3 Metal Can TO-72-3 Metal Can
Supplier Device Package TO-72 TO-72