JANTXV2N1613L vs JANTXV2N1613

Product Attributes

Part Number JANTXV2N1613L JANTXV2N1613
Manufacturer Microchip Technology Microchip Technology
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
JANTXV2N1613L JANTXV2N1613
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max) 10µA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V 40 @ 150mA, 10V
Power - Max 800 mW 800 mW
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 TO-39 (TO-205AD)