JANSR2N3501 vs JANSR2N3501L

Product Attributes

Part Number JANSR2N3501 JANSR2N3501L
Manufacturer Microchip Technology Microchip Technology
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
JANSR2N3501 JANSR2N3501L
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 2 µA 300 mA
Voltage - Collector Emitter Breakdown (Max) 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 2µA 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 500 mW 1 W
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-39 (TO-205AD) TO-5