JAN2N5796A vs JAN2N5793A

Product Attributes

Part Number JAN2N5796A JAN2N5793A
Manufacturer Microchip Technology Microchip Technology
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
JAN2N5796A JAN2N5793A
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 600mA 600mA
Voltage - Collector Emitter Breakdown (Max) 60V 40V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 40 @ 150mA, 10V
Power - Max 600mW 600mW
Frequency - Transition - -
Operating Temperature -65°C ~ 175°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-78-6 Metal Can TO-78-6 Metal Can
Supplier Device Package TO-78-6 TO-78-6