JAN2N3762 vs JAN2N3762L

Product Attributes

Part Number JAN2N3762 JAN2N3762L
Manufacturer Microchip Technology Microchip Technology
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
JAN2N3762 JAN2N3762L
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A 900mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1A, 1.5V 40 @ 500mA, 1V
Power - Max 1 W 1 W
Frequency - Transition - -
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-39 (TO-205AD) TO-5