IXYP20N65C3D1 vs IXYP20N65C3D1M

Product Attributes

Part Number IXYP20N65C3D1 IXYP20N65C3D1M
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXYP20N65C3D1 IXYP20N65C3D1M
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 50 A 18 A
Current - Collector Pulsed (Icm) 105 A 105 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A 2.5V @ 15V, 20A
Power - Max 200 W 50 W
Switching Energy 430µJ (on), 350µJ (off) 430µJ (on), 350µJ (off)
Input Type Standard Standard
Gate Charge 30 nC 30 nC
Td (on/off) @ 25°C 19ns/80ns 19ns/80ns
Test Condition 400V, 20A, 20Ohm, 15V 400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr) 135 ns 30 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3