IXYP10N65B3D1 vs IXYP20N65B3D1

Product Attributes

Part Number IXYP10N65B3D1 IXYP20N65B3D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXYP10N65B3D1 IXYP20N65B3D1
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 32 A 58 A
Current - Collector Pulsed (Icm) 62 A 108 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 10A 2.1V @ 15V, 20A
Power - Max 160 W 230 W
Switching Energy 300µJ (on), 200µJ (off) 500µJ (on), 450µJ (off)
Input Type Standard Standard
Gate Charge 20 nC 29 nC
Td (on/off) @ 25°C 17ns/125ns 12ns/103ns
Test Condition 400V, 10A, 50Ohm, 15V 400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr) 29 ns 25 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220