IXYK100N65B3D1 vs IXYX100N65B3D1

Product Attributes

Part Number IXYK100N65B3D1 IXYX100N65B3D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXYK100N65B3D1 IXYX100N65B3D1
Product Status Active Active
IGBT Type - PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 225 A 225 A
Current - Collector Pulsed (Icm) 460 A 460 A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 70A 1.85V @ 15V, 70A
Power - Max 830 W 830 W
Switching Energy 1.27mJ (on), 2mJ (off) 1.27mJ (on), 1.37mJ (off)
Input Type Standard Standard
Gate Charge 168 nC 168 nC
Td (on/off) @ 25°C 29ns/150ns 29ns/150ns
Test Condition 400V, 50A, 3Ohm, 15V 400V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr) 37 ns 156 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-247-3 Variant
Supplier Device Package TO-264 PLUS247™-3