IXYH55N120A4 vs IXYH85N120A4

Product Attributes

Part Number IXYH55N120A4 IXYH85N120A4
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXYH55N120A4 IXYH85N120A4
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 175 A 300 A
Current - Collector Pulsed (Icm) 350 A 520 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 55A 1.8V @ 15V, 85A
Power - Max 650 W 1150 W
Switching Energy 2.3mJ (on), 5.3mJ (off) 4.9mJ (on), 8.3mJ (off)
Input Type Standard Standard
Gate Charge 110 nC 200 nC
Td (on/off) @ 25°C 23ns/300ns 40ns/400ns
Test Condition 600V, 40A, 5Ohm, 15V 600V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 35 ns 40 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)