IXYH40N65C3D1 vs IXYQ40N65C3D1

Product Attributes

Part Number IXYH40N65C3D1 IXYQ40N65C3D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXYH40N65C3D1 IXYQ40N65C3D1
Product Status Active Active
IGBT Type PT -
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A
Current - Collector Pulsed (Icm) 180 A 180 A
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 40A 2.35V @ 15V, 40A
Power - Max 300 W 300 W
Switching Energy 830µJ (on), 360µJ (off) 830µJ (on), 650µJ (off)
Input Type Standard Standard
Gate Charge 66 nC 66 nC
Td (on/off) @ 25°C 23ns/110ns 23ns/110ns
Test Condition 400V, 30A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 120 ns 40 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-3P-3, SC-65-3
Supplier Device Package TO-247 (IXTH) TO-3P