IXXX110N65B4H1 vs IXXR110N65B4H1

Product Attributes

Part Number IXXX110N65B4H1 IXXR110N65B4H1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXX110N65B4H1 IXXR110N65B4H1
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 240 A 150 A
Current - Collector Pulsed (Icm) 630 A 460 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A 2.2V @ 15V, 110A
Power - Max 880 W 455 W
Switching Energy 2.2mJ (on), 1.05mJ (off) 2.2mJ (on), 1.05mJ (off)
Input Type Standard Standard
Gate Charge 183 nC 183 nC
Td (on/off) @ 25°C 38ns/156ns 38ns/156ns
Test Condition 400V, 55A, 2Ohm, 15V 400V, 55A, 2Ohm, 15V
Reverse Recovery Time (trr) 100 ns 100 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3
Supplier Device Package PLUS247™-3 ISOPLUS247™